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Discrete energy states induced broadband emission from self-assembly InGaN quantum dots

2019-09-27

Authors: Ji, XL; Tan, XY; Wei, TB; Lu, HX; Wang, JX; Yang, FH; Li, JM

OPTICAL MATERIALS

Volume: 94 Pages: 237-240 Published: AUG 2019 Language: English Document type: Article

DOI: 10.1016/j.optmat.2019.05.049

Abstract:

Light-emission contributed from discrete energy levels of self-assembly InGaN quantum dots is explored to fabricate broadband light-emitting diodes (LEDs). A series of InGaN quantum dots samples are self-assembly grown on sapphire substrate by metal-organic vapor phase epitaxy. Emission from the discrete energy states of the InGaN quantum dots is detected by micro-zone photoluminescence under cryogenic temperature. The peaks assignments are also verified by theoretical simulation. A green LED incorporating InGaN multi-quantum dots as active medium is fabricated, demonstrating a broader emission than the referred multi-quantum wells LED. It suggests quantum dots be of great potential to improve the color-rendering index of white LEDs.

全文链接:https://www.sciencedirect.com/science/article/pii/S0925346719303702?via%3Dihub



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